| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | TW015N120C,S1FG3 1200V SIC-MOSFET TO-247 15MO Toshiba Semiconductor and Storage | 2,793 | - |  |   Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 20mOhm @ 50A, 18V | 5V @ 11.7mA | 158 nC @ 18 V | +25V, -10V | 6000 pF @ 800 V | - | 431W (Tc) | 175°C | - | - | Through Hole | TO-247 | 
|   | SSM3K37CT,L3FMOSFET N-CH 20V 200MA CST3 Toshiba Semiconductor and Storage | 8,794 | - |  |   Datasheet | U-MOSIII | SC-101, SOT-883 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12 pF @ 10 V | - | 100mW (Ta) | 150°C (TJ) | - | - | Surface Mount | CST3 | 
|   | SSM3K35CT,L3FMOSFET N-CH 20V 180MA CST3 Toshiba Semiconductor and Storage | 32,987 | - |  |   Datasheet | - | SC-101, SOT-883 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 9.5 pF @ 3 V | - | 100mW (Ta) | 150°C | - | - | Surface Mount | CST3 | 
|   | SSM3J35CT,L3FMOSFET P-CHANNEL 20V 100MA CST3 Toshiba Semiconductor and Storage | 6,186 | - |  |   Datasheet | π-MOSVI | SC-101, SOT-883 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.2V, 4V | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 12.2 pF @ 3 V | - | 100mW (Ta) | 150°C | - | - | Surface Mount | CST3 | 
|   | SSM3K7002KF,LXHFSMOS NCH I: 0.4A, V: 60V, P: 270 Toshiba Semiconductor and Storage | 17,109 | - |  |   Datasheet | - | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 270mW (Ta) | 150°C | Automotive | AEC-Q101 | Surface Mount | S-Mini | 
|   | SSM3J145TU,LFMOSFET P-CH 20V 3A UFM Toshiba Semiconductor and Storage | 9,968 | - |  |   Datasheet | U-MOSVI | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4.5V | 103mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | +6V, -8V | 270 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UFM | 
|   | SSM6J50TU,LFMOSFET P-CH 20V 2.5A UF6 Toshiba Semiconductor and Storage | 5,998 | - |  |   Datasheet | U-MOSIV | 6-SMD, Flat Leads | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 2V, 4.5V | 64mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | - | ±10V | 800 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 | 
|   | SSM3J371R,LXHFSMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage | 12,597 | - |  |   Datasheet | U-MOSVI | SOT-23-3 Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 55mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | +6V, -8V | 630 pF @ 10 V | - | 1W (Ta) | 150°C | Automotive | AEC-Q101 | Surface Mount | SOT-23F | 
|   | SSM6J402TU,LFMOSFET P-CH 30V 2A UF6 Toshiba Semiconductor and Storage | 6,176 | - |  |   Datasheet | - | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | 2.6V @ 1mA | 5.3 nC @ 10 V | ±20V | 280 pF @ 15 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 | 
|   | SSM6K407TU,LFMOSFET N-CH 60V 2A UF6 Toshiba Semiconductor and Storage | 2,926 | - |  |   Datasheet | - | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 6 nC @ 10 V | ±20V | 150 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 | 







