FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK190E65Z,S1X650V DTMOS VI TO-220 190MOHM Toshiba Semiconductor and Storage |
113 | - |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 190mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | 150°C | - | - | Through Hole | TO-220 |
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TK190U65Z,RQDTMOS VI TOLL PD=130W F=1MHZ Toshiba Semiconductor and Storage |
1,022 | - |
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Datasheet |
DTMOSVI | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 190mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | 150°C | - | - | Surface Mount | TOLL |
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TK200F04N1L,LXGQMOSFET N-CH 40V 200A TO220SM Toshiba Semiconductor and Storage |
1,016 | - |
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Datasheet |
U-MOSVIII-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 0.9mOhm @ 100A, 10V | 3V @ 1mA | 214 nC @ 10 V | ±20V | 14920 pF @ 10 V | - | 375W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
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TK160F10N1L,LXGQMOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage |
5,719 | - |
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Datasheet |
U-MOSVIII-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 6V, 10V | 2.4mOhm @ 80A, 10V | 3.5V @ 1mA | 122 nC @ 10 V | ±20V | 10100 pF @ 10 V | - | 375W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
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XK1R9F10QB,LXGQMOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage |
4,329 | - |
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Datasheet |
U-MOSX-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 6V, 10V | 1.92mOhm @ 80A, 10V | 3.5V @ 1mA | 184 nC @ 10 V | ±20V | 11500 pF @ 10 V | - | 375W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
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TK22A65X5,S5XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
150 | - |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Ta) | 10V | 160mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK110U65Z,RQDTMOS VI TOLL PD=190W F=1MHZ Toshiba Semiconductor and Storage |
5,960 | - |
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Datasheet |
DTMOSVI | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | - | - | Surface Mount | TOLL |
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TKR74F04PB,LXGQMOSFET N-CH 40V 250A TO220SM Toshiba Semiconductor and Storage |
4,284 | - |
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Datasheet |
U-MOSIX-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 250A (Ta) | 6V, 10V | 0.74mOhm @ 125A, 10V | 3V @ 1mA | 227 nC @ 10 V | ±20V | 14200 pF @ 10 V | - | 375W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
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TK125V65Z,LQMOSFET N-CH 650V 24A 5DFN Toshiba Semiconductor and Storage |
10,000 | - |
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Datasheet |
DTMOSVI | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 125mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TK099V65Z,LQMOSFET N-CH 650V 30A 5DFN Toshiba Semiconductor and Storage |
12,407 | - |
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Datasheet |
DTMOSVI | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 99mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | 150°C | - | - | Surface Mount | 5-DFN (8x8) |
