FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK1R5R04PB,LXGQMOSFET N-CH 40V 160A D2PAK Toshiba Semiconductor and Storage |
2,900 | - |
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Datasheet |
U-MOSIX-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Ta) | 6V, 10V | 1.5mOhm @ 80A, 10V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | 175°C | - | - | Surface Mount | D2PAK+ |
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TK1R4F04PB,LXGQMOSFET N-CH 40V 160A TO220SM Toshiba Semiconductor and Storage |
1,000 | - |
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Datasheet |
U-MOSIX-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Ta) | 6V, 10V | 1.9mOhm @ 80A, 6V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
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TPWR8503NL,L1QMOSFET N-CH 30V 150A 8DSOP Toshiba Semiconductor and Storage |
4,674 | - |
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Datasheet |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 0.85mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-DSOP Advance |
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TK20V60W5,LVQMOSFET N-CH 600V 20A 4DFN Toshiba Semiconductor and Storage |
4,812 | - |
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Datasheet |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 156W (Tc) | 150°C (TJ) | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TK170V65Z,LQMOSFET N-CH 650V 18A 5DFN Toshiba Semiconductor and Storage |
4,950 | - |
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Datasheet |
DTMOSVI | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 170mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 150W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TK160F10N1,LXGQMOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage |
4,477 | - |
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Datasheet |
U-MOSVIII-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 10V | 2.4mOhm @ 80A, 10V | 4V @ 1mA | 121 nC @ 10 V | ±20V | 8510 pF @ 10 V | - | 375W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
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TK22A65X,S5XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
183 | - |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Ta) | 10V | 150mOhm @ 11A, 10V | 3.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK28V65W,LQX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
4,966 | - |
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Datasheet |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 120mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TK090U65Z,RQDTMOS VI TOLL PD=230W F=1MHZ Toshiba Semiconductor and Storage |
2,118 | - |
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Datasheet |
DTMOSVI | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | 150°C | - | - | Surface Mount | TOLL |
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TK28V65W5,LQX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
2,500 | - |
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Datasheet |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 140mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
