| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | CLH01(TE16L,Q)DIODE GEN PURP 200V 3A L-FLAT Toshiba Semiconductor and Storage | 7,568 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 3A | 980 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C | 
|   | CLH03(TE16L,Q)DIODE GEN PURP 400V 3A L-FLAT Toshiba Semiconductor and Storage | 7,801 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Standard | 400 V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | - | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | - | 
|   | CLH05(T6L,NKOD,Q)DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage | 6,300 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 5A | 980 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C | 
|   | CLH05(TE16R,Q)DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage | 6,098 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 5A | 980 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C | 
|   | CLH05,LMBJQ(ODIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage | 9,589 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 5A | 980 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C | 
|   | CLH06(TE16L,Q)DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage | 3,653 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Standard | 300 V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | - | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | - | 
|   | CLH07(TE16L,NMB,Q)DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage | 3,498 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Standard | 400 V | 5A | 1.8 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C | 
|   | CLH07(TE16R,Q)DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage | 4,531 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Standard | 400 V | 5A | 1.8 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C | 
|   | CLS01(T6LSONY,Q)DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage | 2,161 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Schottky | 30 V | 10A | 470 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 30 V | 530pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C | 
|   | CLS01(TE16L,PAS,Q)DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage | 3,213 |  |   Datasheet | - | L-FLAT™ | Bulk | Obsolete | Schottky | 30 V | 10A | 470 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 30 V | 530pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |