| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | CRF03(TE85L,Q,M)DIODE GEN PURP 600V 700MA S-FLAT Toshiba Semiconductor and Storage | 5,154 |  | - | - | SOD-123F | Tape & Reel (TR) | Obsolete | Standard | 600 V | 700mA | 2 V @ 700 mA | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 600 V | - | - | - | Surface Mount | S-FLAT (1.6x3.5) | -40°C ~ 150°C | 
|   | U1GWJ49(TE12L,F)DIODE SCHOTTKY 40V 1A PW-MINI Toshiba Semiconductor and Storage | 8,245 |  |   Datasheet | - | TO-243AA | Tape & Reel (TR) | Obsolete | Schottky | 40 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | - | - | Surface Mount | PW-MINI | -40°C ~ 125°C | 
|   | DSF07S30U(TPH3,F)DIODE SCHOTTKY 30V 700MA USC Toshiba Semiconductor and Storage | 7,763 |  |   Datasheet | - | SC-76, SOD-323 | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 700mA | 450 mV @ 700 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | 170pF @ 0V, 1MHz | - | - | Surface Mount | USC | 125°C (Max) | 
|   | DSF05S30U(TPH3,F)DIODE SCHOTTKY 30V 500MA USC Toshiba Semiconductor and Storage | 4,079 |  |   Datasheet | - | SC-76, SOD-323 | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 500mA | 450 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | - | - | Surface Mount | USC | 125°C (Max) | 
|   | CMH05A(TE12L,Q,M)DIODE GEN PURP 400V 1A M-FLAT Toshiba Semiconductor and Storage | 6,518 |  |   Datasheet | - | SOD-128 | Tape & Reel (TR) | Obsolete | Standard | 400 V | 1A | 1.8 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | - | - | - | Surface Mount | M-FLAT (2.4x3.8) | -40°C ~ 150°C | 
|  | CMH08A(TE12L,Q,M)DIODE GEN PURP 400V 2A M-FLAT Toshiba Semiconductor and Storage | 4,353 |  | - | - | SOD-128 | Tape & Reel (TR) | Obsolete | Standard | 400 V | 2A | 1.8 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | - | - | - | Surface Mount | M-FLAT (2.4x3.8) | -40°C ~ 150°C | 
|   | TRS6E65C,S1AQDIODE SIL CARB 650V 6A TO220-2L Toshiba Semiconductor and Storage | 5,245 |  | - | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 35pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) | 
|   | TRS12E65C,S1QDIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage | 3,177 |  | - | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 170 V | 65pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) | 
|  | TRS10E65C,S1QDIODE SIL CARB 650V 10A TO220-2L Toshiba Semiconductor and Storage | 4,224 |  | - | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | - | - | - | Through Hole | TO-220-2L | 175°C (Max) | 
|   | 1SS193S,LF(DDIODE GEN PURP 80V 100MA S-MINI Toshiba Semiconductor and Storage | 5,886 |  | - | - | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | Standard | 80 V | 100mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 80 V | 3pF @ 0V, 1MHz | - | - | Surface Mount | S-Mini | 125°C (Max) |