| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | STPSC606DDIODE SIL CARB 600V 6A TO220AC STMicroelectronics | 2,899 |  |   Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 600 V | 375pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C | 
|   | BYT30P-1000DIODE GEN PURP 1KV 30A SOD93-2 STMicroelectronics | 3,725 |  |   Datasheet | - | SOD-93-2 | Tube | Obsolete | Standard | 1000 V | 30A | 1.9 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 165 ns | 100 µA @ 1000 V | - | - | - | Through Hole | SOD-93-2 | -40°C ~ 150°C | 
|   | BYT30PI-1000RGDIODE GEN PURP 1KV 30A DOP3I STMicroelectronics | 4,625 |  |   Datasheet | - | DOP3I-2 Insulated (Straight Leads) | Tube | Obsolete | Standard | 1000 V | 30A | 1.9 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 165 ns | 100 µA @ 1000 V | - | - | - | Through Hole | DOP3I | -40°C ~ 150°C | 
|   | STPSC10H065DLFDIODE SIL CARB 650V 10A PWRFLAT STMicroelectronics | 6,027 |  |   Datasheet | - | 8-PowerVDFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 595pF @ 0V, 1MHz | - | - | Surface Mount | PowerFlat™ (8x8) HV | -40°C ~ 175°C | 
|   | STPSC806G-TRDIODE SIL CARBIDE 600V 8A D2PAK STMicroelectronics | 5,255 |  |   Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 450pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C | 
| ;;2.jpg)  | STPSC10H12B-TR1DIODE SIL CARBIDE 1.2KV 10A DPAK STMicroelectronics | 8,727 |  |   Datasheet | ECOPACK® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 725pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -40°C ~ 175°C | 
|   | STPSC1006G-TRDIODE SIL CARBIDE 600V 10A D2PAK STMicroelectronics | 5,886 |  |   Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 600 V | 650pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C | 
|   | BHK3012TVDIODE GEN PURP 1.2KV ISOTOP STMicroelectronics | 4,400 |  | - | - | ISOTOP | Bulk | Obsolete | Standard | 1200 V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | - | - | Chassis Mount | ISOTOP® | - | 
|   | STTA2006PIDIODE GEN PURP 600V 20A DOP3I STMicroelectronics | 6,895 |  | - | TURBOSWITCH™ | DOP3I-2 Insulated (Straight Leads) | Bulk | Obsolete | Standard | 600 V | 20A | 1.75 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 100 µA @ 600 V | - | - | - | Through Hole | DOP3I | 150°C (Max) | 
|   | STTA806DIDIODE GP 600V 8A TO220AC INS STMicroelectronics | 5,705 |  |   Datasheet | TURBOSWITCH™ | TO-220-2 Insulated, TO-220AC | Bulk | Obsolete | Standard | 600 V | 8A | 1.75 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 52 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-220AC ins | 150°C (Max) |