IGBT single tube
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Status | Product Grade | Diode Type | VCES | Ic@Tc=100℃ | Ic@Tc=25℃ | Vcesat | Switching Frequency | Eon | Eoff | Short Current Withstand Time | Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CGWT40N120F2KADJSCJ |
5,000 |
|
Datasheet |
industrial | silicon | 1200 | 40 | 80 | 1.7 | 20~45 | 3 | 1.4 | 5 | FST2.0 | |
|
|
CGWT40N120F2LADJSCJ |
5,000 |
|
Datasheet |
industrial | silicon | 1200 | 40 | 80 | 1.5 | 0~8 | 2.8 | 1.9 | 7 | FST2.0 | |
|
|
CGWT40N120F2LANJSCJ |
5,000 |
|
Datasheet |
industrial | - | 1200 | 40 | 80 | 1.5 | 0~8 | 2.5 | 1.7 | 5 | FST2.0 | |
|
|
CGWT40N120F2LANMJSCJ |
5,000 |
|
Datasheet |
automotive | - | 1200 | 40 | 80 | 1.5 | 0~8 | 2.5 | 1.7 | 5 | FST2.0 | |
|
|
CGWT40N65F2KAJSCJ |
5,000 |
|
Datasheet |
industrial | silicon | 650 | 40 | 80 | 1.7 | 20~45 | 1 | 0.32 | 7 | FST2.0 | |
|
|
CGWT40N65F2KADJSCJ |
5,000 |
|
Datasheet |
industrial | silicon | 650 | 40 | 80 | 1.7 | 20~45 | 1.23 | 0.34 | 5 | FST2.0 | |
|
|
CGWT40N65F2KANJSCJ |
5,000 |
|
Datasheet |
industrial | - | 650 | 40 | 80 | 1.7 | 20~45 | 0.34 | 1.23 | 5 | FST2.0 | |
|
|
CGWT40N65F2KAQJSCJ |
5,000 |
|
Datasheet |
industrial | silicon | 650 | 40 | 80 | 1.7 | 20~45 | 1.2 | 0.32 | 7 | FST2.0 | |
|
|
CGWT80N65F2KADJSCJ |
5,000 |
|
Datasheet |
industrial | silicon | 650 | 80 | 100 | 1.75 | 20~45 | 2.69 | 0.87 | 7 | FST2.0 | |
|
|
CGWT80N65F2KASJSCJ |
5,000 |
|
Datasheet |
industrial | SiC | 650 | 80 | 100 | 1.7 | 20~45 | 1.87 | 0.99 | 7 | FST2.0 |
