制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IPDQ60T022S7AXTMA1AUTOMOTIVE_COOLMOS |
100 | - |
|
![]() Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT040W65G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE |
3,938 | - |
|
![]() Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TW083Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 83 |
3,765 | - |
|
![]() Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 118mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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APT5015BVFRGMOSFET N-CH 500V 32A TO247 |
3,823 | - |
|
![]() Datasheet |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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DMWSH120H90SM4QSIC MOSFET BVDSS: >1000V TO247-4 |
4,999 | - |
|
![]() Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V | 97.5mOhm @ 20A, 15V | 3.5V @ 5mA | 47.6 nC @ 15 V | +19V, -8V | 1112 pF @ 1000 V | - | 235W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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AIMCQ120R040M1TXTMA1SIC_DISCRETE |
2,396 | - |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 61A (Tc) | 18V, 20V | 50mOhm @ 20A, 20V | 5.1V @ 6.4mA | 43 nC @ 20 V | +25V, -10V | 1264 pF @ 800 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IPQC60T017S7XTMA1HIGH POWER_NEW |
100 | - |
|
![]() Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 113A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.88mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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IPDQ60T017S7XTMA1HIGH POWER_NEW |
4,155 | - |
|
![]() Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 113A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.88mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IPDQ60T017S7AXTMA1AUTOMOTIVE_COOLMOS |
100 | - |
|
![]() Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPQC60T017S7AXTMA1AUTOMOTIVE_COOLMOS |
100 | - |
|
![]() Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TM3E0039120ASIC MOSFET |
3,556 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tray | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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SCT027H65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
100 | - |
|
![]() Datasheet |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AIMCQ120R030M1TXTMA1SIC_DISCRETE |
2,773 | - |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 78A (Tc) | 18V, 20V | 38mOhm @ 27A, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | +25V, -10V | 1738 pF @ 800 V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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TM3B0039120ASIC MOSFET |
1,590 | - |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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MSC040SMA120B4NMOSFET SIC 1200 V 40 MOHM TO-247 |
4,932 | - |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 71A (Tc) | 18V, 20V | 50mOhm @ 40A, 20V | 5V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1962 pF @ 1000 V | - | 372W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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TW027Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 27 |
3,078 | - |
|
![]() Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 38mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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TW060Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 6 |
3,506 | - |
|
![]() Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 82mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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SCT040W120G3AGHIP-247 IN LINE HEAT SINK 2MM |
100 | - |
|
![]() Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V, 18V | 54mOhm @ 16A, 18V | 4.2V @ 5mA | 56 nC @ 18 V | +22V, -10V | 1329 pF @ 800 V | - | 312W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
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DMWS120H100SM4SIC MOSFET BVDSS: >1000V TO247-4 |
1,134 | - |
|
![]() Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37.2A (Tc) | 15V | 100mOhm @ 20A, 15V | 3.5V @ 5mA | 52 nC @ 15 V | +19V, -8V | 1516 pF @ 1000 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
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STW65N023M9-4N-CHANNEL 650 V, 19.9 MOHM TYP., |
1,021 | - |
|
![]() Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 95A (Tc) | 10V | 23mOhm @ 48A, 10V | 4.2V @ 250µA | 230 nC @ 10 V | ±30V | 8844 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |