| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package | 
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package | 
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                    APT37M100B2MOSFET N-CH 1000V 37A T-MAX Microchip Technology  |  
                4,776 | - | 
                
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                       Datasheet  | 	
                
                - | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] | 
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                    APT44F80B2MOSFET N-CH 800V 47A T-MAX Microchip Technology  |  
                9,462 | - | 
                
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                       Datasheet  | 	
                
                POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 47A (Tc) | 10V | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] | 
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                    APT20M22LVFRGMOSFET N-CH 200V 100A TO264 Microchip Technology  |  
                7,581 | - | 
                
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                       Datasheet  | 	
                
                POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] | 
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                    APT6015LVFRGMOSFET N-CH 600V 38A TO264 Microchip Technology  |  
                7,741 | - | 
                
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                       Datasheet  | 	
                
                POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 2.5mA | 475 nC @ 10 V | - | 9000 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] | 
                 
                     
                 
                
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                    APT1201R4BFLLGMOSFET N-CH 1200V 9A TO247 Microchip Technology  |  
                4,027 | - | 
                
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                       Datasheet  | 	
                
                POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | 10V | 1.5Ohm @ 4.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | ±30V | 2030 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] | 
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                    APT8030LVRGMOSFET N-CH 800V 27A TO264 Microchip Technology  |  
                6,255 | - | 
                
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                       Datasheet  | 	
                
                POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] | 
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                    APT34F100B2MOSFET N-CH 1000V 35A T-MAX Microchip Technology  |  
                8,652 | - | 
                
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                       Datasheet  | 	
                
                POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 380mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] | 
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                 | 
				
                    APT34F100LMOSFET N-CH 1000V 35A TO264 Microchip Technology  |  
                6,495 | - | 
                
                     | 
                  
                  
                    
                       Datasheet  | 	
                
                - | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 400mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] | 
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                    APT50M75B2FLLGMOSFET N-CH 500V 57A T-MAX Microchip Technology  |  
                7,531 | - | 
                
                     | 
                  
                  
                    
                       Datasheet  | 	
                
                POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 57A (Tc) | - | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] | 
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                 | 
				
                    APT84F50B2MOSFET N-CH 500V 84A T-MAX Microchip Technology  |  
                9,517 | - | 
                
                     | 
                  
                  
                    
                       Datasheet  | 	
                
                POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] | 


                
