| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  | APT5010LLLGMOSFET N-CH 500V 46A TO264 Microchip Technology | 2,943 | - |  |   Datasheet | POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] | 
|  | APT5010B2FLLGMOSFET N-CH 500V 46A T-MAX Microchip Technology | 1,878 | - |  |   Datasheet | POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] | 
|  | APT5010LFLLGMOSFET N-CH 500V 46A TO264 Microchip Technology | 3,606 | - |  |   Datasheet | POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] | 
|  | APT38F80LMOSFET N-CH 800V 41A TO264 Microchip Technology | 2,689 | - |  |   Datasheet | POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] | 
|  | APT38F80B2MOSFET N-CH 800V 41A T-MAX Microchip Technology | 3,859 | - |  |   Datasheet | POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] | 
|  | APT12060LVRGMOSFET N-CH 1200V 20A TO264 Microchip Technology | 4,028 | - |  | - | POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 600mOhm @ 10A, 10V | 4V @ 2.5mA | 650 nC @ 10 V | ±30V | 9500 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) | 
|  | APT28M120LMOSFET N-CH 1200V 29A TO264 Microchip Technology | 4,739 | - |  |   Datasheet | POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 29A (Tc) | 10V | 530mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] | 
|   | APT1201R2BLLGMOSFET N-CH 1200V 12A TO247 Microchip Technology | 4,865 | - |  | - | POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 1.2Ohm @ 6A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 | 
|   | APT51F50JMOSFET N-CH 500V 51A ISOTOP Microchip Technology | 2,700 | - |  |   Datasheet | - | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® | 
|   | APT5010JLLU2MOSFET N-CH 500V 41A SOT227 Microchip Technology | 1,554 | - |  |   Datasheet | - | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 | 







